Sublimation growth of titanium nitride crystals

Substrate Effects on the APCVD Growth of Titanium Nitride Films

III-nitride photonic crystals

Numerical simulation of temperature fields during the sublimation growth of SiC single crystals, using WIAS-HiTNIHS

We present numerical computations of the temperature fields in axisymmetric growth apparatus for sublimation growth of silicon carbide (SiC) bulk single crystals by physical vapor transport (PVT) (modified Lely method). The results are computed using our software WIAS-HiTNIHS, the WIAS High Temperature Numerical Induction Heating Simulator; pronunciation: hit-nice, by solving the energy balance...

Ad-b130 122l Sublimation Growth of Large Single Crystals of Beta

Thermal stability of a-titanium in contact with titanium nitride

The thermal stability of an a-Ti film in contact with a d-TiN film in the structure of a TiN/Ti/TiN film stack on SiO2 substrates was studied by in situ sheet resistance (Rs) measurement, Auger electron spectroscopy, glancing angle x-ray diffractometry, cross-sectional transmission electron microscopy, scanning electron microscopy, and atomic force microscopy. It was found that nitrogen dissolv...